Demonstration on GaN-based light-emitting diodes grown on 3C-SiC/Si(111)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3273311
Reference18 articles.
1. MOVPE growth of GaN on Si(111) substrates
2. High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates
3. Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si
4. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of thep-GaN surface
5. Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning
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