Experimental evidence for non-purely electric field-induced threshold switching and modified thermal-assisted model in GeTe phase change material-Reference-Cited by-同舟云学术

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Experimental evidence for non-purely electric field-induced threshold switching and modified thermal-assisted model in GeTe phase change material

Published:2021-05-17 Issue:20 Volume:118 Page:203502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Ziqi¹^ORCID,Tong Hao¹^ORCID,Li Xin¹,Wang Lun¹,Zhao Ruizhe¹,Gu Wei¹,Miao Xiangshui¹^ORCID

Affiliation:

1. School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan 430074, China

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Key Research and Development Plan of Hubei Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0048883

Reference29 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Threshold switching and phase transition numerical models for phase change memory simulations

3. Phase-Change Memory—Towards a Storage-Class Memory

4. Te-based chalcogenide materials for selector applications

5. Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices;Materials;2023-06-11

2. Highly Reliable Ovonic Threshold Switch with TiN/GeTe/TiN Structure;Materials;2023-03-02

3. Full-Analog Implementation of Activation Function Based on Phase-Change Memory for Artificial Neural Networks;IEEE Transactions on Industrial Electronics;2023

4. Controllable Threshold Voltage (V _th) Drift in Ovonic Threshold Switch Devices Under a High-Frequency Continuous Operation;IEEE Transactions on Electron Devices;2022-06

5. Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance;Advanced Electronic Materials;2022-05

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