Highly Reliable Ovonic Threshold Switch with TiN/GeTe/TiN Structure

Author:

Seong Dongjun1,Lee Su Yeon1,Seo Hyun Kyu1,Kim Jong-Woo1ORCID,Park Minsoo2,Yang Min Kyu1ORCID

Affiliation:

1. Artificial Intelligence Convergence Research Lab, Sahmyook University, Seoul 01795, Republic of Korea

2. Smith College of Liberal Arts, Sahmyook University, Seoul 01795, Republic of Korea

Abstract

A new architecture has become necessary owing to the power consumption and latency problems of the von Neumann architecture. A neuromorphic memory system is a promising candidate for the new system as it has the potential to process large amounts of digital information. A crossbar array (CA), which consists of a selector and a resistor, is the basic building block for the new system. Despite the excellent prospects of crossbar arrays, the biggest obstacle for them is sneak current, which can cause a misreading between the adjacent memory cells, thus resulting in a misoperation in the arrays. The chalcogenide-based ovonic threshold switch (OTS) is a powerful selector with highly nonlinear I–V characteristics that can be used to address the sneak current problem. In this study, we evaluated the electrical characteristics of an OTS with a TiN/GeTe/TiN structure. This device shows nonlinear DC I–V characteristics, an excellent endurance of up to 109 in the burst read measurement, and a stable threshold voltage below 15 mV/dec. In addition, at temperatures below 300 °C, the device exhibits good thermal stability and retains an amorphous structure, which is a strong indication of the aforementioned electrical characteristics.

Funder

Academic Research Fund of Dr. Myung Ki (MIKE) Hong in 2020

Publisher

MDPI AG

Subject

General Materials Science

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