Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance-Reference-Cited by-同舟云学术

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Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance

Published:2022-05 Issue:9 Volume:8 Page:2200161
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Seo Hyun Kyu¹,Ryu Jin Joo²,Lee Su Yeon¹,Park Minsoo¹,Park Seong‐Geon³,Song Wooseok²,Kim Gun Hwan²,Yang Min Kyu¹^ORCID

Affiliation:

1. Intelligent Electronic Device Lab Sahmyook University 815 Hwarang‐ro, Nowon‐Gu Seoul 01795 Republic of Korea

2. Division of Advanced Materials Korea Research Institute of Chemical Technology (KRICT) 141 Gajeong‐Ro, Yuseong‐Gu Daejeon 34114 Republic of Korea

3. Semiconductor Research & Development Samsung Electronics 1 Samsungjeonja‐ro, Hwaseong‐si Gyeonggi‐do 18448 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200161

Reference44 articles.

1. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

2. Complementary resistive switches for passive nanocrossbar memories

3. Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices

4. Memory devices and applications for in-memory computing

5. Crossbar RRAM Arrays: Selector Device Requirements During Read Operation

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Configurable Synaptic and Stochastic Neuronal Functions in ZnTe‐Based Memristor for an RBM Neural Network;Advanced Science;2024-09-05

2. Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators;Nature Communications;2024-01-02

3. Ag-dispersive chalcogenide media for readily activated electronic memristor;Applied Surface Science;2024-01

4. Filament-free memristors for computing;Nano Convergence;2023-12-19

5. Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices;Materials;2023-06-11

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