Controllable Threshold Voltage (<i>V</i> <sub>th</sub>) Drift in Ovonic Threshold Switch Devices Under a High-Frequency Continuous Operation-Reference-Cited by-同舟云学术

Controllable Threshold Voltage (V _th) Drift in Ovonic Threshold Switch Devices Under a High-Frequency Continuous Operation

Published:2022-06 Issue:6 Volume:69 Page:3158-3162
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Ziqi¹^ORCID,Wang Lun²^ORCID,Wen Jinyu²,Tong Hao²^ORCID,Miao Xiangshui²^ORCID

Affiliation:

1. School of Artificial Intelligence, Jianghan University, Wuhan, China

2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China

Funder

National Natural Science Foundation of China through the General Program

Key Research and Development Plan of Hubei Province

Hubei Provincial Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09764828.pdf?arnumber=9764828

Reference21 articles.

1. Understanding of Tunable Selector Performance in Si-Ge-As-Se OTS Devices by Extended Percolation Cluster Model Considering Operation Scheme and Material Design

2. Threshold Voltage Drift in Te-Based Ovonic Threshold Switch Devices Under Various Operation Conditions

3. Pulse Dependent Threshold Voltage Variation of the Ovonic Threshold Switch in Cross-Point Memory

4. Low-voltage (~1.3V), arsenic free threshold type selector with ultra high endurance ($> 10^{11}$ ) for high density 1S1R memory array;wu;Proc Symp VLSI Technol,2021

5. Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Statistical modeling of V _th distribution in ovonic threshold switches based on physical switching models;Japanese Journal of Applied Physics;2023-02-15