Fundamental chemical differences among Pb defects on (111) and (100) silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105244
Reference10 articles.
1. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
2. Characterization of Si/SiO2 interface defects by electron spin resonance
3. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
4. 29Si hyperfine structure of unpaired spins at the Si/SiO2interface
5. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
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