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Hydrogen dissociation and diffusion near the Si<111>/a-SiO2 interface: Understanding degradation in MOSFETs

  • Published:2018-08 Issue: Volume:120 Page:561-568
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Sheikholeslam S. ArashORCID,Manzano HegoiORCID,Grecu Cristian,Ivanov André

Funder

Natural Sciences and Engineering Research Council of Canada (NSERC)

Silicon Valley Community Foundation

Departamento de Educación, Política Lingüística y Cultura del Gobierno Vasco

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference42 articles.

1. Electric-field-induced transport of protons in amorphous $sio_2$;Devine;Phys. Rev. B,2001

2. Energetics and diffusion of hydrogen in sio 2;Tuttle;Phys. Rev. B,2000

3. $h_2O$ and $o_2$ molecules in amorphous $sio_2:$ defect formation and annihilation mechanisms;Bakos;Phys. Rev. B,2004

4. On the microscopic structure of hole traps in pmosfets;Grasser,2014

5. Fundamental chemical differences among pb defects on (111) and (100) silicon;Stathis;Appl. Phys. Lett.,1991

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1. Study of hafnium defects in silicon dioxide using density functional theory;Materials Science in Semiconductor Processing;2024-05

2. An Analysis of CDM-induced BTI-like Degradation using VF-TLP in Advanced FinFET Technology;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Multi-scale simulations of hydrogen diffusion and induced defects in amorphous-SiO2/Si interface;Superlattices and Microstructures;2021-08

4. First-Principles Calculations of Silicon Interstitial Defects at the Amorphous-SiO2/Si Interface;The Journal of Physical Chemistry C;2021-07-01

5. Effect of electric field on radiation defects in NPN transistors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-03
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