Electric-field-induced transport of protons in amorphousSiO2
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.233406/fulltext
Reference14 articles.
1. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
2. Interface trap formation via the two-stage H/sup +/ process
3. Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field
4. Post‐irradiation cracking of H2and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors
5. Non-volatile memory device based on mobile protons in SiO2 thin films
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