Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349226
Reference40 articles.
1. An overview of radiation-induced interface traps in MOS structures
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4. Chemical and electronic structure of the SiO2/Si interface
5. Relationship between trapped holes and interface states in MOS capacitors
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