Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process-Reference-Cited by-同舟云学术

Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process

Published:2023-06 Issue:6 Volume:70 Page:2947-2955
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Li Xinyu¹^ORCID,Jia Yunpeng¹,Zhou Xintian¹^ORCID,Zhao Yuanfu¹,Wang Liang²^ORCID,Li Tongde²^ORCID,Fang Xingyu²,Jia Guo³,Deng Zhonghan¹

Affiliation:

1. Faculty of Information Technology, Beijing University of Technology, Beijing, China

2. Beijing Microelectronics Technology Institute, Beijing, China

3. Shenzhen Jihua Micro Special Electronics Ltd., Shenzhen, Company, China

Funder

Common Information System Equipment Pre-Research Project “Research on Single Event Effect (SEE) Mechanisms and Test Methods in Silicon Carbide High Voltage (SiC HV) Power Devices” and

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10136238/10120682.pdf?arnumber=10120682

Reference32 articles.

1. Comparison of Irradiation at Low Dose Rate and Irradiation at Elevated Temperature to Reveal ELDRS in Bipolar Linear Circuits

2. Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides

3. A modified accelerated testing method of ELDRS in extreme-low dose rate irradiation

4. Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs

5. SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance

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