High Performance Split-Gate-Trench MOS Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects-Reference-Cited by-同舟云学术

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High Performance Split-Gate-Trench MOS Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects

Published:2024-06-02 Issue: Volume: Page:1-4
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Container-title:2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Mo Weiye¹,Ye Jun¹,Liu Haonan¹,Xiao Xuan²,Song Yang²,Huang Wei¹,Wang Tao³,Zhang Debin⁴,Zhang David. Wei¹

Affiliation:

1. Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University,Shanghai,China

2. Wuxi China Resources Huajing Microelectronics Co., Ltd.,Wuxi,China

3. Wuxi Microelectronics Scientific and Research Center,Wuxi,China

4. Shanghai Institute of Space Power-Sources,Shanghai,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579605.pdf?arnumber=10579605

Reference11 articles.

1. The Trench Power MOSFET: Part I—History, Technology, and Prospects

2. Total Ionizing Dose Effects in 30-V Split-Gate Trench VDMOS

3. Total-Ionizing-Dose Radiation-Induced Electric Field Redistribution Model and Hardening Method for SGT MOSFET

4. 60 V rating split gate trench MOSFETs having best-in-class specific resistance and figure-of-merit

5. Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS

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