Ultrahigh Au/p‐GaAs Schottky barriers due to plasma hydrogenation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103353
Reference10 articles.
1. Application of reactive-ion-beam etching to recessed-gate GaAs metal–semiconductor field-effect transistors
2. Electrical characterization of Schottky diodes on very low energy ion-etched GaAs surfaces
3. Reactive ion etching induced damage in GaAs and AlGaAs using C2H6/H2/Ar or CCl2F2/O2gas mixtures
4. The influence of low‐energy argon implantation on gallium arsenide Schottky barriers
5. Modification of Schottky barriers in silicon by reactive ion etching with NF3
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicon surface electrical properties after low-temperature in situ cleaning using an electron cyclotron resonance plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-09
2. A study of metal/GaAs interface modification by hydrogen plasma;Journal of Applied Physics;1994-03
3. Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions;Acta Physica Hungarica;1994-03
4. Excess capacitance of Al/n-GaAs Schottky diodes prepared on Ar-(Ar + H)-ion-beam-etched surfaces;Applied Surface Science;1994-02
5. Investigation of room‐temperature ion beam hydrogenation for the removal of traps in silicon ion beam damaged metal‐oxide‐silicon structures;Journal of Applied Physics;1993-03
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