The influence of low‐energy argon implantation on gallium arsenide Schottky barriers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342801
Reference11 articles.
1. Effect of ion‐beam sputter damage on Schottky barrier formation in silicon
2. Modification of Schottky barriers in silicon by reactive ion etching with NF3
3. Effect of low energy Ar+ ion implantation on silicon surface barriers
4. Argon‐ion implantation damage studies in silicon Schottky barriers using anodic oxidation/etching
5. Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen
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1. The Ir-n-GaAs Schottky barrier contacts made by electrochemical deposition;Journal of Applied Physics;2014-06-14
2. A Comparison of Low-Energy As Ion Implantation and Impurity-Free Disordering Induced Defects in N-Type GaAs Epitaxial Layers;Japanese Journal of Applied Physics;2003-03-15
3. Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers;Applied Physics Letters;2001-10-15
4. Excellent rectifying characteristics in Au/n-CdTe diodes upon exposure to rf nitrogen plasma;Semiconductor Science and Technology;1999-09-07
5. Schottky barriers on GaAs: Screened pinning at defect levels;Physical Review B;1999-03-15
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