Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1410870
Reference12 articles.
1. Native defect engineering of interdiffusion using thermally grown oxides of GaAs
2. Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures
3. Investigation of deep levels in rapid thermally annealed SiO2-capped n-GaAs grown by metal-organic chemical vapor deposition
4. Electronic and isochronal annealing properties of electron traps in rapid thermally annealed SiO2-capped n-type GaAs epitaxial layers
5. Point defects and diffusion in thin films of GaAs
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1. Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence;Applied Physics Letters;2011-09-05
2. Optical and physical properties of solgel-derived GeO_2:SiO_2 films in photonic applications;Applied Optics;2007-06-20
3. Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP;Journal of Applied Physics;2003-08-15
4. Electrical characterization of impurity-free disordering-induced defects in n-GaAs using native oxide layers;Applied Physics A: Materials Science & Processing;2003-04-01
5. Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures;Journal of The Electrochemical Society;2003
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