A study of metal/GaAs interface modification by hydrogen plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356269
Reference19 articles.
1. Application of reactive-ion-beam etching to recessed-gate GaAs metal–semiconductor field-effect transistors
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3. Reactive ion etching induced damage in GaAs and AlGaAs using C2H6/H2/Ar or CCl2F2/O2gas mixtures
4. The influence of low‐energy argon implantation on gallium arsenide Schottky barriers
5. Modification of Schottky barriers in silicon by reactive ion etching with NF3
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1. Effect of Low Temperature RF Plasma Treatment on Electrical Properties of Junctionless InGaAs MOSFETs;ECS Journal of Solid State Science and Technology;2019
2. Anomalous Enhancement of In-Diffusion of Plasma-Induced Defects in GaN upon Ultraviolet-Light Irradiation;Japanese Journal of Applied Physics;2013-08-01
3. Hydrogen desorption kinetics and band bending for 6H–SiC(0 0 0 1) surfaces;Surface Science;2009-10
4. Passivation of GaAs(110) with Ga2O3 thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy;Journal of Applied Physics;2002-09
5. Amorphization of the surface region in epitaxial n-GaAs treated with atomic hydrogen;Semiconductors;2002-07
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