Reactive ion etching induced damage in GaAs and AlGaAs using C2H6/H2/Ar or CCl2F2/O2gas mixtures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344296
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1. 3-mm double-heterojunction microwave power HEMT fabricated by selective RIE
2. Fabrication and characterization of one- and zero-dimensional electron systems
3. Highly selective reactive ion etching applied to the fabrication of low-noise AlGaAs GaAs FET's
4. Reactive‐ion etching of GaAs and InP using CCl2F2/Ar/O2
5. Reactive ion etching of GaAs in CCl4/H2and CCl4/O2
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