Low electron mobility of field-effect transistor determined by modulated magnetoresistance-Reference-Cited by-同舟云学术

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

Published:2007-11-15 Issue:10 Volume:102 Page:103701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tauk R.,Łusakowski J.,Knap W.,Tiberj A.,Bougrioua Z.,Azize M.,Lorenzini P.,Sakowicz M.,Karpierz K.,Fenouillet-Beranger C.,Cassé M.,Gallon C.,Boeuf F.,Skotnicki T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2815610

Reference22 articles.

1. A new 'shift and ratio' method for MOSFET channel-length extraction

2. New method for the extraction of MOSFET parameters

3. Investigation of the MOST channel conductance in weak inversion

4. Charge accumulation and mobility in thin dielectric MOS transistors

5. Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. I. Theoretical derivation

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs;IEEE Transactions on Electron Devices;2023-11

2. The influence of confined acoustic phonon on the Quantum Ettingshausen effect in cylindrical quantum wire with an infinite potential in presence of strong electromagnetic wave;Journal of Physics: Conference Series;2021-05-01

3. Comparison between AlGaN surfaces etched by carbon tetrafluoride and argon plasmas: Effect of the fluorine impurities incorporated in the surface;Vacuum;2015-09

4. Mechanism of current flow in a Au-Ti-Al-Ti-n +-GaN ohmic contact in the temperature range of 4.2–300 K;Semiconductors;2014-10

5. Terahertz Plasma Oscillations in Field Effect Transistors: Main Ideas and Experimental Facts;Future Trends in Microelectronics;2013-06-14