Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. I. Theoretical derivation-Reference-Cited by-同舟云学术

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Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. I. Theoretical derivation

Published:2002-03 Issue:3 Volume:49 Page:457-466
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Seong-Dong Kim ,Cheol-Min Park ,Woo J.C.S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/21259/00987117.pdf?arnumber=987117

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