Planar MOSFETs and Their Application to IC Design
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Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-030-79827-7_12
Reference75 articles.
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2. Planes, N. et al.: 28nm FDSOI technology platform for high-speed low-voltage digital applications, in VLSI Technology (VLSIT), 2012 Symposium on, 2012, pp. 133–134. https://doi.org/10.1109/VLSIT.2012.6242497
3. Lindert, N., et al.: Sub-60-nm quasi-planar FinFETs fabricated using a simplified process. IEEE Electron Device Lett. 22(10), 487–489 (2001). https://doi.org/10.1109/55.954920
4. Colinge, J.-P. (ed.): FinFETs and Other Multi-Gate Transistors. Springer, New York (2008)
5. Mistry, K. et al.: A 45nm logic technology with high-k+metal gate transistors, strained silicon, 9 cu interconnect layers, 193nm dry patterning, and 100% Pb-free packaging, in 2007 IEEE International Electron Devices Meeting, (2007, pp. 247–250). https://doi.org/10.1109/IEDM.2007.4418914
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