Mechanism of current flow in a Au-Ti-Al-Ti-n +-GaN ohmic contact in the temperature range of 4.2

Mechanism of current flow in a Au-Ti-Al-Ti-n +-GaN ohmic contact in the temperature range of 4.2–300 K

Published:2014-10 Issue:10 Volume:48 Page:1308-1311
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Sachenko A. V.,Belyaev A. E.,Boltovets N. S.,Konakova R. V.,Kapitanchuk L. M.,Sheremet V. N.,Sveshnikov Yu. N.,Pilipchuk A. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378261410025X.pdf

Reference17 articles.

1. Ohmic Contacts to Semiconductor, Ed. by B. Schwartz (Electrochem Soc., New York, 1969).

2. T. V. Blank and Yu. A. Gol’dberg, Semiconductors 41, 1263 (2007).

3. R. Quay, Gallium Nitride Electronics (Springer, Berlin, Heidelberg, 2008).

4. A. G. Vasil’ev, Yu. V. Kolkovskii, and Yu. A. Kontsevoi, Microwave Wide-Gap Semiconductor Devices and Facilities (Tekhnosfera, Moscow, 2011) [in Russian].

5. M. G. Mil’vidskii and V. B. Osvenskii, Structural Defects in Epitaxial Layers of Semiconductors (Metallurgiya, Moscow, 1985) [in Russian].

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