Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3358192
Reference22 articles.
1. Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices
2. Hot phonons in GaN channels for HEMTs
3. GaN Substrates—Progress, Status, and Prospects
4. GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates
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1. Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs;Applied Physics Letters;2024-04-08
2. Laser slice thinning of GaN-on-GaN high electron mobility transistors;Scientific Reports;2022-05-05
3. Growth and doping of bulk GaN by hydride vapor phase epitaxy*;Chinese Physics B;2020-02-01
4. Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer;IEEE Transactions on Electron Devices;2019-07
5. Optical and electrical characterizations of the V-shaped pits in Fe-doped bulk GaN;Applied Physics Express;2019-06-20
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