Switching of nanosized filaments in NiO by conductive atomic force microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4752032
Reference36 articles.
1. Resistance transition in metal oxides induced by electronic threshold switching
2. Analysis of Transient Currents During Ultrafast Switching of $\hbox{TiO}_{2}$ Nanocrossbar Devices
3. Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance
4. Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories
5. High switching endurance in TaOx memristive devices
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