Operando Direct Observation of Filament Formation in Resistive Switching Devices Enabled by a Topological Transformation Molecule-Reference-Cited by-同舟云学术

Operando Direct Observation of Filament Formation in Resistive Switching Devices Enabled by a Topological Transformation Molecule

Published:2021-11-01 Issue:21 Volume:21 Page:9262-9269
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Hou Kunqi¹,Chen Shuai²^ORCID,Zhou Cheng³,Nguyen Linh Lan⁴,Dananjaya Putu Andhita¹,Duchamp Martial⁴^ORCID,Bazan Guillermo C.³,Lew Wen Siang¹^ORCID,Leong Wei Lin²^ORCID

Affiliation:

1. School of Physical and Mathematical Sciences, Nanyang Technological University 21 Nanyang Link, 637371 Singapore

2. School of Electrical and Electronic Engineering, Nanyang Technological University 50 Nanyang Avenue, 639798 Singapore

3. Depertment of Chemistry, National University of Singapore 3 Science Drive 3, 117543 Singapore

4. School of Materials Science & Engineering, Nanyang Technological University 50 Nanyang Avenue, 639798 Singapore

Funder

Agency for Science, Technology and Research

Ministry of Education Singapore

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.1c03180

Reference41 articles.

1. Resistive Random Access Memory (RRAM)

2. ReRAM: History, Status, and Future

3. Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

5. Oxide-based RRAM materials for neuromorphic computing

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