Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories-Reference-Cited by-同舟云学术

Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories

Published:2011-04 Issue:1 Volume:58 Page:42-47
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nardi F.,Ielmini D.,Cagli C.,Spiga S.,Fanciulli M.,Goux L.,Wouters D.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Baek I, Lee M, Seo S, Lee M, Seo D, Suh D-S, et al. Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses. In: IEDM Tech. Dig.; 2004. p. 587–90.

2. Reproducible resistance switching in polycrystalline NiO films;Seo;Appl Phys Lett,2004

3. Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices;Russo;IEEE Trans Elect Dev,2009

4. Resistance transition in metal oxides induced by electronic threshold switching;Ielmini;Appl Phys Lett,2009

5. Nanoionics-based resistive switching memories;Waser;Nature Mater,2007

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