A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques-Reference-Cited by-同舟云学术

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A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques

Published:2019-09-28 Issue:12 Volume:126 Page:125706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sharpe M. K.¹^ORCID,Marko I. P.²^ORCID,Duffy D. A.²^ORCID,England J.¹^ORCID,Schneider E.¹²,Kesaria M.³^ORCID,Fedorov V.³⁴,Clarke E.³^ORCID,Tan C. H.³^ORCID,Sweeney S. J.²^ORCID

Affiliation:

1. Advanced Technology Institute, Ion Beam Centre, University of Surrey, Guildford GU2 7XH, United Kingdom

2. Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH, United Kingdom

3. Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 4DE, United Kingdom

4. Saint Petersburg Academic University, St. Petersburg 194021, Russia

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5109653

Reference37 articles.

1. Valence-band anticrossing in mismatched III-V semiconductor alloys

2. Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material

3. The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

4. Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

5. Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electric field dependence of the electron drift velocity in n-type InxGa1-xAs1-yBiy epilayer;Physica B: Condensed Matter;2024-07

2. Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications;Semiconductor Science and Technology;2020-08-17

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