Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3614476
Reference20 articles.
1. Valence-band anticrossing in mismatched III-V semiconductor alloys
2. Band Anticrossing in GaInNAs Alloys
3. Characteristics of Semiconductor Alloy GaAs1-xBix
4. Molecular beam epitaxy growth of GaAs1−xBix
5. Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
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