Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2800194
Reference22 articles.
1. Current-voltage characteristics of thin-film SOI MOSFET's in strong inversion
2. Frontiers of silicon-on-insulator
3. Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects
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