Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS 2 Transistor-Reference-Cited by-同舟云学术

Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS 2 Transistor

Published:2021-04 Issue:23 Volume:31 Page:2100625
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Lee Kookjin¹²^ORCID,Choi Junhee³,Kaczer Ben¹,Grill Alexander¹,Lee Jae Woo⁴,Van Beek Simon¹,Bury Erik¹,Diaz‐Fortuny Javier¹,Chasin Adrian¹,Lee Jaewoo⁵,Chun Jungu⁵⁶,Shin Dong Hoon⁷,Na Junhong⁸,Cho Hyeran⁵,Lee Sang Wook⁹,Kim Gyu‐Tae⁵

Affiliation:

1. imec Leuven 3001 Belgium

2. Department of Materials Science KU Leuven Leuven 3001 Belgium

3. Defense agency for technology and quality 420 Dongjin‐ro Jinju‐si Gyeongsangnam‐do 52851 Republic of Korea

4. Interdisciplinary Program for Artificial Intelligence Smart Convergence Technology Korea University Sejong 30019 Republic of Korea

5. School of Electrical Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of Korea

6. Samsung Electronics Co. Ltd 1 Samsung‐ro Yongin‐si Gyeonggi‐do 17113 Republic of Korea

7. Kavli Institute of Nanoscience Delft University of Technology Lorentzweg 1 Delft 2628 CJ The Netherlands

8. Samsung Display Co. Ltd 1 Samsung‐ro Yongin‐si Gyeonggi‐do 17113 Republic of Korea

9. Department of Physics Ewha Womans University 52 Ewhayeodae‐gil, Seodaemun‐gu Seoul 03760 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202100625

Reference57 articles.

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4. Real-time effect of electron beam on MoS2 field-effect transistors

5. Mono- and Bilayer WS2 Light-Emitting Transistors

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