Locally Thinned, Core–Shell Nanowire-Integrated Multi-gate MoS<sub>2</sub> Transistors for Active Control of Extendable Logic-Reference-Cited by-同舟云学术

Locally Thinned, Core–Shell Nanowire-Integrated Multi-gate MoS₂ Transistors for Active Control of Extendable Logic

Published:2022-12-23 Issue:1 Volume:15 Page:1563-1573
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Xiao Yu¹^ORCID,Zou Guisheng¹,Huo Jinpeng¹,Sun Tianming¹²,Feng Bin¹^ORCID,Liu Lei¹^ORCID

Affiliation:

1. Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China

2. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi Province, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c17788

Reference52 articles.

1. Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS 2 Transistor

2. High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping

3. Electrical characterization of 2D materials-based field-effect transistors

4. Multilevel MoS2 Optical Memory with Photoresponsive Top Floating Gates

5. High Mobility Anisotropic Black Phosphorus Nanoribbon Field-Effect Transistor

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