High Mobility Anisotropic Black Phosphorus Nanoribbon Field-Effect Transistor-Reference-Cited by-同舟云学术

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High Mobility Anisotropic Black Phosphorus Nanoribbon Field-Effect Transistor

Published:2018-05-21 Issue:28 Volume:28 Page:1801524
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Feng Xuewei¹²,Huang Xin¹²,Chen Li¹²,Tan Wee Chong¹²,Wang Lin¹²,Ang Kah-Wee¹²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering; National University of Singapore; 4 Engineering Drive 3 Singapore 117583 Singapore

2. Centre for Advanced 2D Materials; National University of Singapore; 6 Science Drive 2 Singapore 117543 Singapore

Funder

Science and Engineering Research Council

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201801524/fullpdf

Reference48 articles.

1. TWO NEW MODIFICATIONS OF PHOSPHORUS.

2. Black phosphorus field-effect transistors

3. Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping

4. Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus

5. The renaissance of black phosphorus

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2. Electron screening and strength of long-range Coulomb interactions in black phosphorene: From bulk to nanoribbon;Physical Review B;2024-04-04

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4. Phonon-mediated ultrafast energy- and momentum-resolved hole dynamics in monolayer black phosphorus;The Journal of Chemical Physics;2024-03-26

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