Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus
Author:
Affiliation:
1. Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
2. RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
Funder
Research Grants Council, University Grants Committee
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b03951
Reference38 articles.
1. Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction
2. Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus
3. Strain-Induced Gap Modification in Black Phosphorus
4. Electrical Properties of Black Phosphorus Single Crystals
5. Quantum Hall effect and semiconductor-to-semimetal transition in biased black phosphorus
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