Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping-Reference-Cited by-同舟云学术

Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping

Published:2017-04-12 Issue:24 Volume:29 Page:1700503
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Tan Wee Chong¹,Cai Yongqing²,Ng Rui Jie¹,Huang Li¹,Feng Xuewei¹,Zhang Gang²,Zhang Yong-Wei²,Nijhuis Christian A.³,Liu Xinke⁴,Ang Kah-Wee¹

Affiliation:

1. Department of Electrical and Computer Engineering; National University of Singapore; 4 Engineering Drive 3 117583 Singapore

2. Institute of Higher Performance Computing; 1 Fusionopolis Way 138632 Singapore

3. Department of Chemistry; NUS; 3 Science Drive 3 117543 Singapore

4. College of Materials Science and Engineering; Guangdong Research Center for Interfacial Engineering of Functional Materials; Shenzhen University; 3688 Nanhai Ave Shenzhen 518060 P. R. China

Funder

National University of Singapore

Science and Engineering Research Council

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference32 articles.

1. Graphene transistors

2. Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors

3. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

4. Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications

5. Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

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