Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors-Reference-Cited by-同舟云学术

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Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors

Published:2012-08-07 Issue:40 Volume:24 Page:5481-5486
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Some Surajit,Kim Jangah,Lee Keunsik,Kulkarni Atul,Yoon Yeoheung,Lee SaeMi,Kim Taesung,Lee Hyoyoung

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201202255/fullpdf

Reference30 articles.

1. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

2. Electric Field Effect in Atomically Thin Carbon Films

3. Experimental observation of the quantum Hall effect and Berry's phase in graphene

4. Energy Band-Gap Engineering of Graphene Nanoribbons

5. Gate-induced insulating state in bilayer graphene devices

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