A strong reduction in the density of near-interface traps at the SiO2∕4H‐SiC interface by sodium enhanced oxidation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2745321
Reference17 articles.
1. SiC power-switching devices-the second electronics revolution?
2. Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation
3. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
4. Shallow electron traps at the 4H–SiC/SiO2 interface
5. Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC
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4. Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation;AIP Advances;2023-05-01
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