Electromigration failure of integrated circuit metallizations subjected to high-frequency pulsed currents
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367431
Reference21 articles.
1. Electromigration failure modes in aluminum metallization for semiconductor devices
2. Electromigration in conductor stripes under pulsed dc powering
3. A model of electromigration failure under pulsed condition
4. On the electromigration failure under pulsed conditions
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1. Electromigration behavior of advanced metallization on the structural effects for memory devices;Microelectronic Engineering;2016-04
2. Experimental characterization and modelling of electromigration lifetime under unipolar pulsed current stress;Microelectronics Reliability;2012-08
3. Improved Stability of Pd/Ti Contacts to p-Type SiC Under Continuous DC and Pulsed DC Current Stress;Journal of Electronic Materials;2010-12-17
4. Effects of Pulse Duration and Polarity on the Electromigration Behavior of Copper Interconnects under Pulsed Current Stress;MRS Proceedings;2008
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