Electromigration behavior of advanced metallization on the structural effects for memory devices-Reference-Cited by-同舟云学术

Electromigration behavior of advanced metallization on the structural effects for memory devices

Published:2016-04 Issue: Volume:156 Page:97-102
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Jang Kyung-Tae,Park Yong-Jin,Jeong Min-Woo,Lim Seung-Min,Yeon Han-Wool,Cho Ju-Young,Jin Min-Gi,Shin Jin-Sub,Woo Byoung-Wook,Bae Jang-Yong,Hwang Yu-Chul,Joo Young-Chang

Funder

Samsung Electronics Co., Ltd.

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Mass transport of aluminum by momentum exchange with conducting electrons;Black,1967

2. Mechanisms for very long electromigration lifetime in dual-damascene Cu interconnections;Hu;Appl. Phys. Lett.,2001

3. Bidirectional electromigration failure;Lim;Microelectron. Reliab.,2013

4. Mechanical stress evolution in metal interconnects for various line aspect ratios and passivation dielectrics;Park;Microelectron. Eng.,2003

5. Evidence of grain-boundary versus interface diffusion in electromigration experiments in copper damascene interconnects;Arnaud;J. Appl. Phys.,2003

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3. Electromigration Characteristics and Morphological Evolution of Cu Interconnects on CVD Co and Ru Liners for 10-nm Class VLSI Technology;IEEE Electron Device Letters;2018-07

4. Transmission electron microscopy study of the failure mechanism of the diffusion barriers (TiN and TaN) between Al and Cu;Metals and Materials International;2017-01