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Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface

  • Published:2006-07-24 Issue:4 Volume:89 Page:042111
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Hamilton J. J.,Cowern N. E. B.,Sharp J. A.,Kirkby K. J.,Collart E. J. H.,Colombeau B.,Bersani M.,Giubertoni D.,Parisini A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion of strontium implanted in glassy carbon;Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences;2021-06

2. Diffusion of a mono-energetic implanted species with a Gaussian profile;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-09

3. Effects of interface bonding and defects on boron diffusion at Si/SiO2 interface;Journal of Applied Physics;2013-12-14

4. Ab initio study of boron segregation and deactivation at Si/SiO2 interface;Microelectronic Engineering;2012-01

5. Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator;Journal of Applied Physics;2010-04
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