Effects of interface bonding and defects on boron diffusion at Si/SiO2 interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4844415
Reference42 articles.
1. Segregation and transport coefficients of impurities at the Si/SiO2interface
2. Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe
3. SIMS/ARXPS—A New Technique of Retained Dopant Dose and Profile Measurement of Ultralow-Energy Doping Processes
4. Point defects and dopant diffusion in silicon
5. Models of boron redistribution during thermal oxidation with general oxidation rate
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