Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3369160
Reference26 articles.
1. Kinetics of {311} defect dissolution in silicon-on-insulator (SOI)
2. Evolution of end-of-range defects in silicon-on-insulator substrates
3. Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink
4. Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface
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3. Effects of interface bonding and defects on boron diffusion at Si/SiO2 interface;Journal of Applied Physics;2013-12-14
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5. Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation;Materials Science in Semiconductor Processing;2013-12
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