In situtime‐resolved monitoring of PH3induced exchange reactions on GaAs under metalorganic vapor phase epitaxy conditions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111718
Reference13 articles.
1. Mode of growth in LP-MOVPE deposition of GalnAs/lnP quantum wells
2. Formation of interface layers in GaxIn1−xAs/InP heterostructures: A re‐evaluation using ultrathin quantum wells as a probe
3. Interface optimization of GaInAs/GaInAsP (λ = 1.3 mm) superlattices by the use of growth interruptions
4. Study of interrupted MOVPE growth of InGaAs/InP superlattice
5. InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition
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