Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
2. Anisotropic reflectance from semiconductor surfaces for in-situ monitoring in epitaxial growth systems
3. Observation and analysis of epitaxial growth with reflectance-difference spectroscopy
4. Spectroscopic process sensors in MOVPE device production
5. Application of reflectance anisotropy spectroscopy to laser diode growth in MOVPE
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1. Quantification of the As/P content in GaAsP during MOVPE growth;Applied Physics Letters;2020-08-10
2. In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions;Advanced Materials Interfaces;2017-10-10
3. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
4. Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4;Journal of Crystal Growth;2008-11
5. In-Situ Monitoring for Nano-Structure Growth in MOVPE;Semiconductor Nanostructures;2008
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