Metal oxide semiconductor structure using oxygen-terminated diamond
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4811668
Reference26 articles.
1. Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator
2. High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
3. Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties
4. Simulations of carrier confinement in boron δ-doped diamond devices
5. Hole transport in boron delta-doped diamond structures
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