Hole transport in boron delta-doped diamond structures-Reference-Cited by-同舟云学术

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Hole transport in boron delta-doped diamond structures

Published:2012-10-15 Issue:16 Volume:101 Page:162101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chicot G.,Tran Thi T. N.,Fiori A.,Jomard F.,Gheeraert E.,Bustarret E.,Pernot J.

Funder

French National Center for Scientific Research (CNRS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4758994

Reference19 articles.

1. Unlocking diamond's potential as an electronic material

2. Activation energy in low compensated homoepitaxial boron-doped diamond films

3. High hole mobility in boron doped diamond for power device applications

4. Analytical studies on multiple delta doping in diamond thin films for efficient hole excitation and conductivity enhancement

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1. Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates;Nanosystems: Physics, Chemistry, Mathematics;2022-10-31

2. Nitrogen modulation of boron doping behavior for accessible n-type diamond;APL Materials;2021-08-01

3. Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications;Journal of Physics D: Applied Physics;2020-05-20

4. Performance projection of high-voltage, quasi-lateral diamond MOSFET for power electronics applications;Diamond and Related Materials;2020-04

5. The occupied electronic structure of ultrathin boron doped diamond;Nanoscale Advances;2020

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