Type II and mixed type I–II radiative recombinations in AlInAs–InP heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369517
Reference22 articles.
1. Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy
2. Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications
3. Optical transitions and chemistry at the In0.52Al0.48As/InP interface
4. Low temperature InAlAs buffer layers using trimethylarsenic and arsine by metalorganic chemical vapor deposition
5. Optical analysis of hot carrier distribution and transport properties in InP/AlInAs type II heterostructures
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1. The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation;AIP Advances;2024-01-01
2. Different spectral features near the energy bandgaps of normal and inverse heterostructures of In<sub>0.52</sub>Al<sub>0.48</sub>As/InP;Acta Physica Sinica;2024
3. Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures;Technical Physics;2017-07
4. Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk;Applied Physics Letters;2017-03-20
5. Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity;Journal of Physics: Conference Series;2016-02
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