Electrical quality of low‐temperature (Tdep≤800 °C) epitaxial silicon: The effect of deposition temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340248
Reference15 articles.
1. An optimizedinsituargon sputter cleaning process for device quality low‐temperature (T≤800 °C) epitaxial silicon: Bipolar transistor andpnjunction characterization
2. Dependence of residual damage on temperature during Ar+sputter cleaning of silicon
3. Bipolar transistor fabrication in low-temperature (745°C) ultra-low-pressure chemical-vapor-deposited epitaxial silicon
4. Bulk‐quality bipolar transistors fabricated in low‐temperature (Tdep=800 °C) epitaxial silicon
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1. Electrical properties of an epitaxial Si film prepared by RF magnetron plasma at low temperature;Thin Solid Films;2005-03
2. Electrical characteristics of p–n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
3. Quality of Selective Silicon Epitaxial Films Deposited Using Disilane and Chlorine;Journal of The Electrochemical Society;1999-06-01
4. A Low‐Thermal‐Budget In Situ Doped Multilayer Silicon Epitaxy Process for MOSFET Channel Engineering;Journal of The Electrochemical Society;1999-03-01
5. Delta doping in silicon;Critical Reviews in Solid State and Materials Sciences;1993-01
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