Improvement of GaAs crystal quality grown on Si by metalorganic chemical vapor deposition through two‐dimensional‐like nucleation with aninsituH2/AsH3plasma cleaning at 450 °C-Reference-Cited by-同舟云学术

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Improvement of GaAs crystal quality grown on Si by metalorganic chemical vapor deposition through two‐dimensional‐like nucleation with aninsituH2/AsH3plasma cleaning at 450 °C

Published:1991-02-25 Issue:8 Volume:58 Page:862-864
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yoon Euijoon,Reif Rafael

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.104514

Reference14 articles.

1. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

2. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD

3. Effect of substrate surface structure on nucleation of GaAs on Si(100)

4. Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

5. Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy

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