Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101698
Reference7 articles.
1. Mater. Res. Soc. Symp. Proc.67(1986), MRSPDH0272-9172
2. 94(1987), MRSPDH0272-9172, Mater. Res. Soc. Symp. Proc.
3. and116(1988), and references therein.MRSPDH0272-9172, Mater. Res. Soc. Symp. Proc.
4. Microstructure of thin layers of MBE-grown GaAs on Si substrates
5. Graded‐thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxy
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