Graded‐thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99624
Reference11 articles.
1. Formation of the interface between GaAs and Si: Implications for GaAs‐on‐Si heteroepitaxy
2. Location of atoms in the first monolayer of GaAs on Si
3. Initial stages of epitaxial growth of GaAs on (100) silicon
4. The growth of GaAs on Si by MBE
5. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
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