In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Sublattice allocation and antiphase domain suppression in polar-on-nonpolar nucleation
2. Molecular Beam Epitaxial Growth of Stress-released GaAs Layers on Si(001) Substrates
3. In situReal-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms
4. Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth
5. Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy
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1. High-Resolution X-Ray Diffraction Analysis of Epitaxial Films;ACTA METALL SIN;2020
2. Influences of ultrathin amorphous buffer layers on GaAs/Si grown by metal–organic chemical vapor deposition;Applied Physics A;2018-03-12
3. Picoscale materials engineering;Nature Reviews Materials;2017-09-19
4. Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction;AIP Advances;2016-03
5. A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(100);Journal of Crystal Growth;2015-05
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