Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4943511
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111);Physical Review Materials;2018-12-03
2. Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness;Journal of Applied Physics;2018-04-28
3. Suppression of twin generation in the growth of GaAs on Ge (111) substrates;Journal of Crystal Growth;2017-11
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